High frequency transistor

Details High frequency transistor High frequency transistor

1976-12-13

1978-08-29

Miller, Jr., Stanley D.

357 35, 357 49, 357 55, 357 89, 357 91, H01L 2972

Patent

active

041107799

ABSTRACT:
A high-frequency transistor is provided having a small effective emitter width and a low base bulk resistance. The transistor is isolated from adjacent components by insulating material portions. The base zone comprises first and second doped zones. The first zone establishes the effective emitter width and has a lower concentration than the second zone. The lateral extent of the first zone is established by one of the insulating material portions and the second zone of the base zone. The collector of the transistor is positioned beneath both the first and second zones of the base zone and the emitter of the transistor is positioned above the first zone and an end portion of the second zone.

REFERENCES:
patent: 3933540 (1976-01-01), Kondo et al.
patent: 4005453 (1977-01-01), Le Can et al.
patent: 4008107 (1977-02-01), Mayasaka et al.
W. J. Evans, "Oxide Isolated Low-implanted Bipolar Transistors for High Packing Density and Low Power-Delay Product," Digest of Technical Papers of the 1973 IEEE International Solid-State Circuits Conference, Philadelphia, Pa., (Feb. 14-16, 1973), pp. 174-175.

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