Active solid-state devices (e.g. – transistors – solid-state diode – Bipolar transistor structure – With base region having specified doping concentration...
Reexamination Certificate
2007-07-24
2007-07-24
Jackson, Jerome (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Bipolar transistor structure
With base region having specified doping concentration...
C257S582000, C257S583000, C257S557000, C257SE21181, C257SE29187, C257SE29171, C257S119000, C257S132000
Reexamination Certificate
active
11008582
ABSTRACT:
A high-frequency switching transistor comprises a collector area, which has a first conductivity type, a first barrier area bordering on the collector area, which has a second conductivity type which differs from the first conductivity type, and a semiconductor area bordering on the first barrier area, which has a dopant concentration which is lower than a dopant concentration of the first barrier area. Further, the high-frequency switching transistor has a second barrier area bordering on the semiconductor area, which has a first conductivity type, as well as a base area bordering on the second barrier area, which has a second conductivity type. Additionally, the high-frequency switching transistor comprises a third barrier area bordering on the semiconductor area, which has the second conductivity type and a higher dopant concentration than the semiconductor area. Further, the high-frequency switching transistor has an emitter area bordering on the third barrier area, which has the first conductivity type. Thereby it is possible to provide a high-frequency switching transistor, which has a lower bias voltage, a higher switchable power as well as a shorter switching time.
REFERENCES:
patent: 2806983 (1957-09-01), Hall
patent: 3019352 (1962-01-01), Wertwijn
patent: 3510735 (1970-05-01), Potter
patent: 5969402 (1999-10-01), Rynne
patent: 6891250 (2005-05-01), Sakamoto
patent: 2 130 006 (1984-05-01), None
Infineon - Technologies AG
Jackson Jerome
Maginot Moore & Beck
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