High frequency switching circuit device

Geometrical instruments – Area integrators – Electrical

Reexamination Certificate

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C333S101000

Reexamination Certificate

active

07337547

ABSTRACT:
A diode logic circuit which can select a high voltage from among the voltages of a number of control voltage input terminals using a number of diodes made of Schottky junctions is integrally formed on a compound semiconductor substrate on which MESFET stages for switching and for securing isolations have been formed. In addition, the MESFET stages for switching are controlled by the voltages of the number of control voltage input terminals and the MESFET stages for securing isolations are controlled by the OR voltage that is outputted from the diode logic circuit.

REFERENCES:
patent: 6700433 (2004-03-01), Zuk
patent: 7106121 (2006-09-01), Hidaka et al.
patent: 7161197 (2007-01-01), Nakatsuka et al.
patent: 7173471 (2007-02-01), Nakatsuka et al.
patent: 06085641 (1994-03-01), None
patent: 11150464 (1999-06-01), None

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