High frequency switching circuit and semiconductor device

Details High frequency switching circuit and semiconductor device High frequency switching circuit and semiconductor device

2007-02-06

2007-02-06

Lam, Tuan T. (Department: 2816)

Miscellaneous active electrical nonlinear devices, circuits, and

Signal converting, shaping, or generating

Amplitude control

C327S427000, C327S379000, C327S431000, C333S08100R, C333S104000, C333S145000

Reexamination Certificate

active

10864351

ABSTRACT:
Four switching circuit sections consisting of four FETs connected in series are provided between a plurality of input/output terminals which output and input a high frequency signal. Gate control voltages are individually applied to gate terminals of four FETs, respectively, so that an on-state and an off-state are achieved. Further drain control voltages are individually applied to drain terminals or source terminals of the FET in each switching circuit section, and a voltage according to an electric power value of the high frequency signal supplied to each of switching circuit sections is supplied as the gate control voltage and the drain control voltage.

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