High frequency switch device, front end unit and transceiver

Details High frequency switch device, front end unit and transceiver High frequency switch device, front end unit and transceiver

1998-07-24

2000-09-12

Nguyen, Lee

Telecommunications

Transmitter and receiver at same station

With transmitter-receiver switching or interaction prevention

455 82, 455 83, 333103, H04B 144

Patent

active

061189855

ABSTRACT:
In order to minimize the chip area and improve the linear characteristics obtained when large signals are inputted, a high frequency switch device comprises first, second and third terminals (3, 4, 6); a first circuit composed of a first FET (11), and a first inductor (21) and a first capacitor (25) both connected with the first FET (11) in parallel to each other, one end of the first circuit being connected to the first terminal (3); and a second circuit composed of a second FET (12), and a second inductor (22) and a second capacitor (26) both connected with the second FET (12) in parallel to each other, one end of the second circuit being connected to the first circuit and the other end of the second circuit being connected to the second terminal (4). Further, the high frequency switch device is characterized in that a first control signal is applied to a gate of the first FET (11) via a resistance (31); a second control signal is applied to a gate of the second FET (12) via a resistance (33); the third terminal (6) is connected to a common junction point of the first and second circuits; and a predetermined potential is applied to the common junction point.

REFERENCES:
patent: 5748053 (1998-05-01), Kameyama et al.
patent: 5878331 (1999-03-01), Yamamoto et al.

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