Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Passive components in ics
Reexamination Certificate
2005-03-22
2005-03-22
Thomas, Tom (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
Passive components in ics
C257S347000, C257S379000, C257S516000, C257S528000, C257S536000, C327S308000, C327S408000, C333S101000, C333S103000
Reexamination Certificate
active
06870241
ABSTRACT:
A high frequency switch circuit device includes an FET to be a switching element on a semiconductor substrate. The FET includes an n-type well, a gate electrode, a source layer and a drain layer. An n-type well line to be connected to an n-type well layer to be a back gate is connected to a voltage supply node via an inductor. The flow of a high frequency signal between the voltage supply node and the n-type well layer is blocked by the inductor, and the flow of a high frequency signal in the vertical direction is blocked by a depletion layer extending between the n-type well and a p-type substrate region. Moreover, the flow of a high frequency signal in the horizontal direction is blocked by a trench separation insulative layer.
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Imanishi Ikuo
Ito Junji
Nakatani Toshifumi
McDermott Will & Emery LLP
Thomas Tom
Warren Matthew E.
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