Miscellaneous active electrical nonlinear devices – circuits – and – Gating – Signal transmission integrity or spurious noise override
Reexamination Certificate
2005-02-08
2005-02-08
Callahan, Timothy P. (Department: 2816)
Miscellaneous active electrical nonlinear devices, circuits, and
Gating
Signal transmission integrity or spurious noise override
C327S419000, C327S427000, C333S101000
Reexamination Certificate
active
06853235
ABSTRACT:
In order to provide a high frequency switch in which the setting range of the control voltage is expanded, the high frequency switch is constructed from a switch and a reference voltage generation circuit. The switch comprises first and second field effect transistors. In the first field effect transistor, the source electrode is connected to a signal input terminal, while the drain electrode is connected to a signal output terminal, and while the source electrode is connected to a control terminal. In the second field effect transistor, the source electrode is connected to the signal input terminal, while the drain electrode is connected to the signal output terminal, and while the gate electrode is connected to the control terminal. The reference voltage generation circuit generates two reference voltages the values of which are different from each other, then provides the lower reference voltage to the gate electrode of the first field effect transistor, and then provides the higher reference voltage to the source electrode of the second field effect transistor.
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K. Miyatsuji, et al.; “A GaAs Single Voltage Controlled RF Switch IC,” IEICE Transactions on Electronics, Institute of Electronics Information and Comm, Eng. Tokyo, JP, vol. E78-C, NR. 8, pp. 931-935, XP000536071, ISSN: 0916-8524, Aug. 8, 1995.
Inamori Masahiko
Motoyoshi Kaname
Nakayama Masao
Yamamoto Takashi
Callahan Timothy P.
Luu An T.
Matsushita Electric - Industrial Co., Ltd.
Stevens Davis Miller & Mosher LLP
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