High-frequency switch

Details High-frequency switch High-frequency switch

2007-05-15

2009-11-03

Takaoka, Dean O (Department: 2817)

Wave transmission lines and networks

Plural channel systems

Having branched circuits

C333S104000

Reexamination Certificate

active

07612633

ABSTRACT:
The present invention provides a high-frequency switch including: a first switching element connected between a first input/output terminal and a second input/output terminal; a second switching element connected between the second input/output terminal and the first switching element; a high-frequency line provided between the first input/output terminal, the first switching element, and a third input/output terminal; and a third switching element connected between the third input/output terminal, the high-frequency line, and a ground. By connecting the first switching element, the second switching element, the high-frequency line, and the third switching element, because there exists no FET through which a large current flows when a state between the first input/output terminal and the third input/output terminal is set to a transmission state which requires high power handling capability, there is no need to use an FET having a large gate width, which is effective in reducing a loss of the switch.

REFERENCES:
patent: 4897563 (1990-01-01), Bahl
patent: 5159297 (1992-10-01), Tateno
patent: 5193218 (1993-03-01), Shimo
patent: 6693498 (2004-02-01), Sasabata et al.
Val Kaper, et al. “Monolithic AlGaN/GaN HEMT SPDT switch” IEEE 12thGAAS Symposium, 2004, pp. 83-86.

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