High frequency sputtering produces thin film amorphous silicon p

Details High frequency sputtering produces thin film amorphous silicon p High frequency sputtering produces thin film amorphous silicon p

1979-11-02

1981-10-27

Welsh, John D.

Coating processes

Electrical product produced

Photoelectric

338 15, 430127, 430128, 430133, 430 84, 427 39, B05P 512, G03G 508

Patent

active

042973929

ABSTRACT:
In the course of producing a thin film of amorphous silicon by high frequency sputtering elemental silicon under an atmosphere containing at least hydrogen gas, the temperature of the base plate onto which the amorphous silicon is deposited is maintained at a temperature of about 50.degree. C. to 150.degree. C. The thus obtained silicon film possesses not only photoconductivity sufficient for use as a photoconductor but also a large difference between photoconductivity and dard conductivity. In addition, a photoconductor of an amorphous silicon thin film can be produced at low cost without environmental pollution problems.

REFERENCES:
patent: 4064521 (1977-12-01), Carlson
patent: 4072518 (1978-02-01), Leder
patent: 4151058 (1979-04-01), Kaplan
patent: 4196438 (1980-04-01), Carlson
Paul et al., Solid State Communications, vol. 20, pp. 969-972 (1976).

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