High-frequency SMD transistor having two emitter terminals

Details High-frequency SMD transistor having two emitter terminals High-frequency SMD transistor having two emitter terminals

1991-01-18

1992-04-21

Hille, Rolf

357 68, 357 72, H01L 2348, H01L 2350

Patent

active

051073269

ABSTRACT:
A high-frequency SMD transistor having two emitter terminals is provided in which a semiconductor chip is secured on a lead frame and is contacted to electrical terminals on the lead frame in a manner to enable minimum semiconductor chip dimensions given high reliability. The two emitter terminals of the high-frequency SMD transistor are fashioned of one piece within the lead frame. A single electrical connection is present between the emitter contact of the semiconductor chip and the two one-piece emitter terminals.

REFERENCES:
patent: 4556896 (1985-12-01), Meddles
Grenier H., "Entwicklungstendenzen bei diskreten Transistoren unter besonderer Beachtung der Aufsetztechnik," Nachrichtentechnik Elektronik, vol. 37, No. 5, pp. 169-174.

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