High frequency semiconductor transistor

Details High frequency semiconductor transistor High frequency semiconductor transistor

1995-12-01

1997-06-17

Mintel, William

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

257197, 257198, H01L 310328, H01L 310336, H01L 31072, H01L 31109

Patent

active

056400250

ABSTRACT:
A high frequency transistor including a heavily doped first current carrying layer positioned on a substrate and a semi-insulating layer of LTGaAs epitaxially grown on the first layer. The semi-insulating layer is etched, using a layer of AlAs as an etch stop, to define an active region and a first current carrying electrode is grown on the exposed first layer in the active region. A control layer is grown on the semi-insulating layer and the first current carrying electrode, and a second current carrying electrode is grown on the control layer. External contacts are formed on the first current carrying layer, the control layer, and the second current carrying electrode.

Affiliated with

Also associated with

Rating

High frequency semiconductor transistor does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with High frequency semiconductor transistor, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and High frequency semiconductor transistor will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2159919