High frequency semiconductor package

Details High frequency semiconductor package High frequency semiconductor package

1979-12-20

1979-04-17

James, Andrew J.

Electricity: conductors and insulators

Feedthrough or bushing

Compression

357 80, 357 81, 174 52S, 333246, H01L 2302, H01L 2312, H01L 3902

Patent

active

041503937

ABSTRACT:
A low parasitic microwave transistor package is provided including a metal header formed from a base member and having a cylindrical center portion; a metallized ceramic insulator formed in an annular ring which is attached to the metal header and surrounding the center portion thereof. A shallow channel is provided in the surface of the pedestal or center portion of the metal header in which a metallized beryllia insulator is attached. Metal leads are attached to the ceramic insulator. The metallized beryllia insulator is suitable for a semiconductor die chip to be attached to the outward surface thereof such that any one of the preferred electrodes of the semiconductor chip can be attached to the header, by stitch bonding, through a very low inductance, low resistance connection. The other electrodes of a semiconductor chip may be selectively attached, via stitch bonds, directly to the metal leads or connected in series thereto through MOS capacitor chips which can be attached to the remaining surface area of the pedestal.

REFERENCES:
patent: 3325704 (1967-06-01), Belasco et al.
patent: 3626259 (1971-12-01), Garboushian
patent: 3705255 (1972-12-01), Low et al.
patent: 3808474 (1974-04-01), Cooke et al.
patent: 3946428 (1976-03-01), Anazawa et al.

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