High frequency semiconductor module, high frequency...

Active solid-state devices (e.g. – transistors – solid-state diode – Housing or package

Reexamination Certificate

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C257S672000, C257S673000

Reexamination Certificate

active

06940157

ABSTRACT:
A high frequency semiconductor module, includes: a semiconductor chip having top and bottom surfaces; a semiconductor element merged in the semiconductor chip; a ground pad of the semiconductor element disposed on the top surface; a metal layer configured to connect to the ground pad and extend to sidewalls of the semiconductor chip; a ground metal arranged on a surface of a mounting substrate; and a conductive material formed on the ground, configured to connect the metal layer and the ground metal.

REFERENCES:
patent: 6706547 (2004-03-01), Sakamoto et al.
patent: 2004/0212051 (2004-10-01), Zhao et al.
patent: 5-47937 (1993-02-01), None
patent: 2606940 (1997-02-01), None
patent: 2634300 (1997-04-01), None
patent: 2001-308109 (2001-11-01), None

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