High frequency semiconductor integrated circuit device,...

Details High frequency semiconductor integrated circuit device,... High frequency semiconductor integrated circuit device,...

2006-11-07

2006-11-07

Chang, Joseph (Department: 2817)

Oscillators

Solid state active element oscillator

Transistors

C331S1170FE, C331S074000, C331S143000, C333S033000, C333S246000, C455S126000

Reexamination Certificate

active

07132900

ABSTRACT:
If a transmission oscillator is incorporated into a communication semiconductor integrated circuit, such as high a frequency IC, constituting a wireless communication system, a problem arises. The accuracy of control of the output power of a power amplifier is degraded. This degradation in accuracy is caused by coupling noise between the output pins of the transmission oscillator and an input pin for detection signals (feedback signals) associated with the output level of the power amplifier or crosstalk. To prevent this, a transmission oscillator of differential output configuration is incorporated into a high frequency IC and an impedance equivalent to the impedance connected with a regular output terminal or a dummy external terminal for outputting transmit signals in opposite phase is provided.

REFERENCES:
patent: 5434545 (1995-07-01), Burchfield
patent: 6295442 (2001-09-01), Camp et al.
patent: 6646343 (2003-11-01), Sharma et al.
patent: 6806106 (2004-10-01), Leighton et al.
patent: 2005/0176388 (2005-08-01), Yamawaki et al.
“High Linearity RF Amplifier Design”, P. Kenington, Artech House, Inc., 1979, p. 162.

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