High frequency semiconductor devices

Details High frequency semiconductor devices High frequency semiconductor devices

1978-02-22

1980-09-02

Zazworsky, John

Electrical transmission or interconnection systems

Nonlinear reactor systems

Parametrons

307254, 307317R, 307237, H03K 1758

Patent

active

042208742

ABSTRACT:
The high frequency semiconductor device of the present comprises a pair of diodes and a transfer switch. The anode electrodes of the diodes are connected together and the transfer switch operates to connect the cathode electrode of one diode to ground and the cathode electrode of the other diode to a voltage source so as to forwardly bias one diode and reversely bias the other diode. By the selective operation of the transfer switch, the device operates either as a switch for passing high frequency signals or as an attenuator for high frequency signals.

REFERENCES:
patent: 3183373 (1965-05-01), Sakarai
patent: 3459969 (1969-08-01), Jasper
patent: 3475700 (1969-10-01), Ertel

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