Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – Field effect transistor
Patent
1997-06-27
1999-03-30
Mintel, William
Active solid-state devices (e.g., transistors, solid-state diode
Heterojunction device
Field effect transistor
257194, 257195, 257259, 257280, H01L 2980, H01L 31112
Patent
active
058892974
ABSTRACT:
On two active areas formed in a semiconductor substrate, source electrodes, gate electrodes, and drain electrodes are disposed symmetrically to each other. A gate pad section electrically connected to both gate electrodes is disposed at one side of the active areas, and a drain pad section electrically connected to both drain electrodes is disposed at the other side of the active areas. A source pad section electrically connected to one source electrode is disposed at one side of the gate pad section and the drain pad section, and a source pad section electrically connected to the other source electrode is disposed at the other side of the gate pad section and the drain pad section. An input slot line is formed between the gate pad section and the source pad sections, and an output slot line is formed between the drain pad section and the source pad sections.
REFERENCES:
patent: 3737743 (1973-06-01), Goronkin et al.
patent: 4315272 (1982-02-01), Vorhaus
patent: 5168329 (1992-12-01), Shiga
Ishikawa Yohei
Sakamoto Koichi
Mintel William
Murata Manufacturing Co. Ltd.
LandOfFree
High frequency semiconductor device with slots does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with High frequency semiconductor device with slots, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and High frequency semiconductor device with slots will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1217059