Electricity: conductors and insulators – Boxes and housings – Hermetic sealed envelope type
Reexamination Certificate
2002-03-26
2003-05-20
Reichard, Dean A. (Department: 2831)
Electricity: conductors and insulators
Boxes and housings
Hermetic sealed envelope type
C174S261000, C361S772000, C361S777000, C257S728000
Reexamination Certificate
active
06566601
ABSTRACT:
BACKGROUND OF THE INVENTION
1. Field of the Invention
The present invention relates to a ball grid array-type high frequency semiconductor device housing package for mounting and housing therein a high frequency semiconductor device for use in, for example, a microwave or millimeter wave region, and to a mounting structure for mounting the same. More particularly, the invention relates to a high frequency semiconductor device housing package that provides improved efficiency of high frequency signal transmission and also provides high mounting yields, and to a mounting structure for mounting the same.
2. Description of the Related Art
Conventionally, a high frequency semiconductor device housing package for use in a high-frequency range such as a microwave or millimeter wave region is constructed as follows. For example, on a base substrate made of metal is placed a metallic frame body and the like to constitute a wall portion. The metallic frame body constituting the wall portion has a notch formed in one part thereof. In this notch portion is provided an input/output terminal by fitting and bonding that has a line-conversion structure constituted by a combination of micro-strip line/strip line (triplate line)/micro strip line, which is obtained by stacking dielectric layers one on top of another. Then, after a semiconductor circuit device for use in a high-frequency range is mounted within the package, a lid body made of metal or a dielectric material is attached thereon by soldering, welding, or other techniques.
Moreover, in such a high frequency semiconductor device housing package, the input/output terminal, acting as an interface between the semiconductor circuit device housed therewithin and an external electric circuit is commonly shaped as a planar circuit, like a micro-strip line. Thus, for establishing connection with the external electric circuit, on a ground surface having a flat plane, like a bottom surface of a metal chassis, are arranged the circuit board of the external electric circuit and the input/output terminal which is designed to be possibly uniform in height with the circuit board, and their strip lines are connected to one another by a gold wire or the like. In a case where it is difficult to make the circuit board and the input/output terminal uniform in height, their strip lines are mutually connected by wire bonding with the difference in height left between the circuit board and the input/output terminal. Otherwise, if possible, wire bonding is carried out after the ground surface is suitably processed so that the input/output terminal is possibly uniform in surface height with the circuit board.
However, the above-described conventional high frequency semiconductor device housing package has the following disadvantage. In a high-frequency range, in particular a millimeter wave region, in order to suppress occurrence of unnecessary mode in signal transmission, the constituent components need to be made as small as possible in dimension. As a result, formation of a notch in the wall portion, fabrication of the input/output terminal, or assembling process for these components need to be performed with remarkably high accuracy. This makes difficult the manufacture of the high frequency semiconductor device housing package, and thus leads to an undesirable increase in the manufacturing cost.
There arises another problem involved in the connection with the external electric circuit. In a high-frequency band such as a millimeter wave region, if wire bonding is carried out with the difference in height left in the mounting surface, the transmission characteristics are deteriorated. Even in a case where the ground surface is suitably processed, the discontinuity of the height of the ground surface can lead to deterioration in the transmission characteristics. Still another problem is that, likewise to the above, the hollowing of the bottom surface of the chassis or other processing needs to be achieved with remarkably high accuracy.
Further, a problem is encountered also in the operation for mounting the high frequency semiconductor device housing package with respect to the circuit board. The input/output terminal and the external electric circuit need to be positioned relative to each other by butting with high accuracy, and this makes the mounting operation difficult.
As a consequence, there is an increasing demand for such a high frequency semiconductor device housing package that is manufacturable solely with a production process based on a thick film printing technique suitable for mass production and a technique for realizing a multilayer structure of dielectric layers such as ceramics, and that provides satisfactory high-frequency characteristics and has a mounting structure in which stable mounting accuracy can be obtained in a simple manner.
SUMMARY OF THE INVENTION
The invention has been devised to solve the above stated problems associated with the conventional art, and to satisfy the requirements on a high frequency semiconductor device housing package. Accordingly, an object of the invention is to provide a ball grid array-type high frequency semiconductor device housing package that is manufacturable by a thick film printing technique suitable for mass production and a multilayer technique for use with dielectric layers such as ceramics, and that provides satisfactory high-frequency characteristics and has a structure in which stable mounting accuracy can be obtained in a simple manner. Another object of the invention is to provide amounting structure for mounting the same.
The invention provides a high frequency semiconductor device housing package, comprising:
an insulating substrate having on its one surface a mounting and housing portion for mounting and housing therein a high frequency semiconductor device;
a plurality of wiring conductors that are electrically connected to an electrode of the high frequency semiconductor device, the wiring conductors being so arranged as to extend from the mounting and housing portion through another surface of the insulating substrate opposite to the one surface, the wiring conductors including a signal wiring conductor and a grounding wiring conductor;
a ball-shaped signal terminal that is arranged on the other surface of the insulating substrate, the ball-shaped signal terminal being electrically connected to the signal wiring conductor included in the wiring conductors; and
a plurality of ball-shaped grounding terminals that are arranged on the other surface of the insulating substrate and electrically connected to the grounding wiring conductor included in the wiring conductors, the ball-shaped grounding terminals being arranged substantially circularly so as to surround the centered ball-shaped signal terminal.
According to the invention, on an under surface, i.e. the other surface of the insulating substrate are arranged a plurality of ball-shaped signal terminals and a plurality of ball-shaped grounding terminals that are electrically connected to the wiring conductors. The ball-shaped grounding terminals are plurally arranged substantially circularly so as to surround the centered ball-shaped signal terminal. In this construction, the ball-shaped signal terminal can be defined as a signal conductor for a coaxial line, and the ball-shaped grounding terminal can be defined as a grounding conductor for the coaxial line. Accordingly, the high-frequency signal fed from the circuit board to the ball-shaped signal terminal can be transmitted efficiently.
In the invention, it is preferable that the ball-shaped grounding terminals are arranged substantially circularly at intervals equal to or less than one quarter of a signal wavelength of a high-frequency signal.
According to the invention, by arranging the ball-shaped grounding terminals substantially circularly at intervals equal to or less than one quarter of a signal wavelength of a high-frequency signal, in a space sandwiched between the under surface of the insulating substrate of the package and the top surface of the circuit board, a high-f
Hogan & Hartson LLP
Kyocera Corporation
Oliva Carmelo
Reichard Dean A.
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