Active solid-state devices (e.g. – transistors – solid-state diode – Housing or package – For high frequency device
Patent
1996-10-28
1999-06-29
Arroyo, Teresa M.
Active solid-state devices (e.g., transistors, solid-state diode
Housing or package
For high frequency device
257676, 257669, 257692, 333247, H01L 2334, H01L 23495, H01L 2348, H01L 2552
Patent
active
059172410
ABSTRACT:
A high frequency semiconductor device includes a molded resin package having side surfaces; a source lead for die-bonding, having a thickness, partially disposed within the package, and penetrating through the side surfaces of the package; gate and drain leads having the same thickness as the source lead and disposed adjacent to and spaced from the source lead by a distance shorter than the thickness of the source lead, the gate and drain leads being partially disposed within the package and penetrating through the side surfaces of the package; and a field effect transistor die-bonded to the source lead within the package and electrically connected within the package to the source, gate, and drain leads.
REFERENCES:
patent: 4891686 (1990-01-01), Krausse, III
patent: 5057805 (1991-10-01), Kadowaki
patent: 5294897 (1994-03-01), Notani et al.
patent: 5420459 (1995-05-01), Kozono
patent: 5495125 (1996-02-01), Uemura
patent: 5512781 (1996-04-01), Inoue
patent: 5631809 (1997-05-01), Takagi et al.
Nakamura Yukio
Nakayama Osamu
Ohtsuji Jun
Arroyo Teresa M.
Mitsubishi Denki & Kabushiki Kaisha
LandOfFree
High frequency semiconductor device having source, drain, and ga does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with High frequency semiconductor device having source, drain, and ga, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and High frequency semiconductor device having source, drain, and ga will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1377869