High-frequency semiconductor device having emitter stabilizing r

Details High-frequency semiconductor device having emitter stabilizing r High-frequency semiconductor device having emitter stabilizing r

1991-05-07

1993-04-20

LaRoche, Eugene R.

Active solid-state devices (e.g., transistors, solid-state diode

Integrated circuit structure with electrically isolated...

Passive components in ics

257734, 257565, H01L 2348, H01L 2972, H01L 2182

Patent

active

052047350

ABSTRACT:
High-frequency transistors are formed on a semiconductor substrate. Each transistor includes an emitter having a fish-bone structure, a base formed to surround the emitter, and a base lead region connected to the base. A resistor layer having the same conductivity type as that of the base lead region, and an impurity concentration and a junction depth equal to those of the base lead region is formed in the substrate. An emitter electrode is connected to the emitter and the resistor layer. A portion of the emitter electrode connected to the resistor layer has an interdigital structure, and is connected to the resistor layer at two or more contact surface portions or an interdigital surface portion. An electrode on the wiring layer side is connected to the resistor layer. A portion of the electrode connected to the resistor layer has an interdigital structure which matches with the interdigital structure of the emitter electrode.

REFERENCES:
patent: 4091409 (1978-05-01), Wheatley, Jr.
patent: 4134080 (1979-01-01), Gentzler
patent: 4266236 (1981-05-01), Ueda
patent: 4370670 (1983-01-01), Nawata et al.
patent: 4782378 (1988-11-01), Sekiya et al.
patent: 4835588 (1989-05-01), Nawata et al.
Japanese Patent Publication (Kokoku) No. 52-3787, Morise Bonise, publication date Jan. 29, 1977.

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