Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum
Reexamination Certificate
2008-04-29
2008-04-29
Andujar, Leonardo (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified material other than unalloyed aluminum
C257S774000
Reexamination Certificate
active
07365433
ABSTRACT:
The object of the present invention is to implement an enhancement in a noise eliminating characteristic of a wiring compatibly with promotion of microfabrication and simplification of a manufacturing process. Upper and side surfaces of a wiring (6) for transmitting a signal are continuously covered by a conductor layer (12) with insulators (7), (8) and (9) interposed therebetween in a section crossing a direction of extension thereof, and the conductor layer (12) is connected to a semiconductor substrate (1). Moreover, a periphery of a wiring (15) for transmitting a signal is continuously covered by the conductor layer (12) and a conductor layer (19) with insulators (14), (16), (17) and (18) interposed therebetween in a section crossing a direction of extension thereof. The wiring (15) is electrically connected to the semiconductor substrate (1) through a conductive plug (13) filled in a contact hole (24) formed in the conductor layer (12).
REFERENCES:
patent: 5198380 (1993-03-01), Harari
patent: 5784311 (1998-07-01), Assaderaghi et al.
patent: 6329680 (2001-12-01), Yoshida et al.
patent: 6 216343 (1994-08-01), None
patent: 1999-73868 (1999-10-01), None
Andujar Leonardo
McDermott Will & Emery LLP
Renesas Technology Corp.
LandOfFree
High-frequency semiconductor device and method of... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with High-frequency semiconductor device and method of..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and High-frequency semiconductor device and method of... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2780122