1991-07-08
1992-04-28
James, Andrew J.
357 68, 357 80, H01L 2160, H01L 2348
Patent
active
051092700
ABSTRACT:
A high frequency semiconductor device comprising metal electrode leads formed on one surface of a flexible film, a plurality of bumps formed on selected portions of the electrode patterns, a recessed portion formed on the flexible film within a region bounded by the plurality of bumps and a plurality of electrode pads of a high frequency semiconductor element respectively bonded to the bumps in alignment with each other.
REFERENCES:
patent: 3561107 (1971-02-01), Best et al.
patent: 3657613 (1972-04-01), Brody et al.
patent: 3942245 (1976-03-01), Jackson et al.
patent: 4200975 (1980-05-01), Debiec et al.
patent: 4215359 (1980-07-01), Schermer et al.
patent: 4232512 (1980-11-01), Yoshikawa et al.
patent: 4413308 (1983-11-01), Brown
patent: 4527330 (1985-07-01), Sturm et al.
patent: 4607276 (1986-08-01), Butt
patent: 4612566 (1986-09-01), Kowata et al.
patent: 4649415 (1987-03-01), Hebert
patent: 4670770 (1987-06-01), Tai
patent: 4736236 (1988-04-01), Butt
Hammerschmitt, "Microwave Semiconductors for SMT", Siemens Components, vol. XXII, No. 2, pp. 64-67, Apr. 1988.
Azuma Chinatsu
Ishikawa Osamu
Nambu Shutaro
James Andrew J.
Matsushita Electric - Industrial Co., Ltd.
Nguyen Viet Q.
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