Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Junction field effect transistor
Patent
1997-06-20
2000-08-08
Mintel, William
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Junction field effect transistor
257347, 257350, 257368, 257379, 333204, 333247, H01L 2980, H01L 31112
Patent
active
061005541
ABSTRACT:
An intrinsic device section is provided by laminating a drain area, an intermediate area, and a source area above a GaAs substrate and by forming a channel area at one oblique surface thereof. A drain electrode ohmic connected to the drain area extends toward the output side, a source electrode ohmic connected to the source area extends above the drain electrode with a dielectric layer placed therebetween, and thereby an output micro-wave transmission line is formed. A gate electrode Schottky connected to the channel area extends toward the input side, the source electrode extends above the drain electrode with the dielectric layer placed therebetween, and thereby an input micro-wave transmission line formed.
REFERENCES:
patent: 4479100 (1984-10-01), Moghe et al.
patent: 4996582 (1991-02-01), Nagahama
patent: 5256996 (1993-10-01), Marsland et al.
Ishikawa Yohei
Sakamoto Koichi
Mintel William
Murata Manufacturing Co. Ltd.
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