Active solid-state devices (e.g. – transistors – solid-state diode – Housing or package – For high frequency device
Reexamination Certificate
2007-07-19
2010-02-23
Bryant, Kiesha R. (Department: 2891)
Active solid-state devices (e.g., transistors, solid-state diode
Housing or package
For high frequency device
C257S686000, C257SE23080
Reexamination Certificate
active
07667322
ABSTRACT:
An example of a high-frequency semiconductor device includes two unit semiconductor devices. Each of the two unit semiconductor devices has a ground substrate, a high-frequency semiconductor element, an input-side matching circuit, an output-side matching circuit, a side wall member, an input terminal, and an output terminal. The ground substrate has heat-radiating property. The high-frequency semiconductor element is provided on the ground substrate. The input-side matching circuit is connected to the high-frequency semiconductor element. The output-side matching circuit is connected to the high-frequency semiconductor element. The side wall member surrounds at least the high-frequency semiconductor element. The input terminal is connected to the input-side matching circuit. The output terminal is connected to the output-side matching circuit. The two unit semiconductor devices are coupled to each other at upper edges of the side wall members.
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Translation of JP 5-83010, original document provided in IDS.
U.S. Appl. No. 12/507,287, filed Jul. 22, 2009, Takagi.
Bryant Kiesha R.
Kabushiki Kaisha Toshiba
Oblon, Spivak McClelland, Maier & Neustadt, L.L.P.
Tornow Mark W
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