High frequency semiconductor device

Details High frequency semiconductor device High frequency semiconductor device

2008-01-22

2008-01-22

Smith, Zandra V. (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified configuration

C257S734000, C324S765010

Reexamination Certificate

active

11349087

ABSTRACT:
A high frequency semiconductor device includes a semiconductor substrate, a high frequency semiconductor element on the semiconductor substrate, a high frequency signal transmission line connected at a first end to the high frequency semiconductor element, a high frequency signal input/output pad connected to a second end of the high frequency signal transmission line, the high frequency signal input/output pad extending perpendicular to the length direction of the high frequency signal transmission line, and ground potential pads on opposite longitudinal sides of the high frequency signal input/output pad.

REFERENCES:
patent: 5051810 (1991-09-01), Katoh
patent: 6555907 (2003-04-01), Katoh
patent: 2002/0167083 (2002-11-01), Chaki
patent: 60-249374 (1985-12-01), None
patent: 2002-334935 (2002-11-01), None

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