Active solid-state devices (e.g. – transistors – solid-state diode – With means to control surface effects – Insulating coating
Reexamination Certificate
2005-02-08
2005-02-08
Lee, Eddie (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
With means to control surface effects
Insulating coating
C257S636000, C257S637000, C257S758000, C257S759000, C257S665000, C257S662000, C257S664000
Reexamination Certificate
active
06853054
ABSTRACT:
A high frequency semiconductor device including wiring layers which are formed above a semiconductor substrate and in which transmission lines are formed by combining with a ground plate having a potential fixed at the ground potential, at least one crossing portion in which the wiring layers mutually cross, with insulating interlayers provided therebetween, and at least one separation electrode being selectively provided on one of the insulating interlayers, the at least one separation electrode having a potential fixed at the ground potential. Accordingly, in the high frequency semiconductor device, electrical interference between two crossing wiring layer is prevented and transmission loss is suppressed.
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Baba Osamu
Mimino Yutaka
Fujitsu Quantum Devices Limited
Lee Eddie
Vu Quang
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