High frequency semiconductor device

Details High frequency semiconductor device High frequency semiconductor device

2005-08-16

2005-08-16

Hu, Shouxiang (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Junction field effect transistor

C257S277000, C257S698000, C257S728000, C257S737000, C257S778000

Reexamination Certificate

active

06930334

ABSTRACT:
A high frequency semiconductor device including a high frequency semiconductor chip, comprising an active region provided on a front face side of the high frequency semiconductor chip; a covering electrode provided on the active region and connected to a ground potential; and a back face wiring provided on a back face side of the high frequency semiconductor chip. The back face wiring forms a high frequency transmission line together with the covering electrode functioning as a high frequency ground plate. A front face wiring may be provided on the front face side of the high frequency semiconductor chip to form a high frequency transmission line together with the covering electrode.

REFERENCES:
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patent: 5202752 (1993-04-01), Honjo
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patent: 5532506 (1996-07-01), Tserng
patent: 5635762 (1997-06-01), Gamand
patent: 5710068 (1998-01-01), Hill
patent: 2002/0003291 (2002-01-01), Lamson et al
patent: 2003/0040440 (2003-02-01), Wire et al.
patent: 2003/0103006 (2003-06-01), Yamada

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