Active solid-state devices (e.g. – transistors – solid-state diode – Housing or package – For plural devices
Patent
1998-04-15
2000-12-26
Smith, Matthew
Active solid-state devices (e.g., transistors, solid-state diode
Housing or package
For plural devices
257728, 438107, H01L 2144, H01L 2160
Patent
active
061664367
ABSTRACT:
A high frequency semiconductor device includes: a substrate having a substantially flat principal surface, with a predetermined circuit pattern including at least an input line, an output line, and a ground electrode provided on the principal surface; and a transistor which has a drain electrode, a source electrode, and a gate electrode and is mounted on the substrate by a flip chip mounting. The source electrode and the ground electrode are connected to each other by a first bump in the flip chip mounting.
REFERENCES:
D. Helms et al., 1991 IEEE MTT-S Digest, pp. 819-821, 1991.
H. Sakai et al., 1994 IEEE MTT-S Digest, pp. 1763-1766, 1994.
Maeda Masahiro
Nakamura Morio
Yamazaki Masazumi
Yoshida Takayuki
Kelly Michael K.
Lee Calom
Matsushita Electric - Industrial Co., Ltd.
Smith Matthew
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