Amplifiers – With semiconductor amplifying device – Including plural amplifier channels
Reexamination Certificate
2005-03-01
2005-03-01
Choe, Henry (Department: 2817)
Amplifiers
With semiconductor amplifying device
Including plural amplifier channels
C330S12400D
Reexamination Certificate
active
06861906
ABSTRACT:
A high-frequency semiconductor device according to the present invention achieves improvements in degradation of noise characteristics and a reduction in gain, and an improvement in reduction in power efficiency while suppressing a concentration of a current to multifinger HBTs. In the multifinger HBTs constituting a first stage and an output stage of an amplifier10, basic HBTs14that constitute the multifinger HBT12corresponding to the first stage, are each made up of an HBT14aand an emitter resistor14bconnected to the corresponding emitter of the HBT14a, whereas basic HBTs18that constitute the multifinger HBT16corresponding to the output stage, are each comprised of an HBT18aand a base resistor18cconnected to the corresponding base of the HBT18a. The high-frequency semiconductor device according to the present invention is useful as a high output power amplifier used in satellite communications, ground microwave communications, mobile communications, etc.
REFERENCES:
patent: 3042875 (1962-07-01), Higginbotham
patent: 5760457 (1998-06-01), Mitsui et al.
patent: 5889434 (1999-03-01), Shimura et al.
patent: 6448859 (2002-09-01), Morizuka
patent: 212477 (1987-03-01), None
patent: 0 212 477 (1987-03-01), None
patent: 597397 (1994-05-01), None
patent: 736908 (1996-10-01), None
patent: 10-98336 (1998-04-01), None
Kazutomi Mori et al.: “A GSM900/DCS1800 dual-band MMIC power amplifier using outside-base/center-via-hol layout multifinger HBT” IEICE Transactions on Electronics, vol. E82-C, No. 11, pp. 1913-1920 11/99.
William Liu: “Failure mechanism in AlGaAs/GaAs power heterojunction bipolar transistors” IEEE Transactions on Electron Device, vol. 43, No. 2, pp. 220-227 02/96.
T. Shimura et al.: “1W Ku-band AlGaAs/GaAs power HBTs with 72% peak power-added efficiency” IEEE MTT-S International Microwave Symposium Digest, vol. 2, WE2A-6, pp. 687-390 05/94.
Maemura Kousei
Mori Kazutomi
Nakahara Kazuhiko
Shimura Teruyuki
Shinjo Shintaro
LandOfFree
High-frequency semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with High-frequency semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and High-frequency semiconductor device will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3368149