High-frequency semiconductor device

Details High-frequency semiconductor device High-frequency semiconductor device

1997-06-20

1999-06-15

Mintel, William

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Junction field effect transistor

257347, 257350, 257368, 257379, 333204, 333247, H01L 2980, H01L 31112

Patent

active

059124849

ABSTRACT:
An intrinsic device section is provided by laminating a drain area, an intermediate area, and a source area above a GaAs substrate and by forming a channel area at one oblique surface thereof. A drain electrode ohmic connected to the drain area extends toward the output side, a source electrode ohmic connected to the source area extends above the drain electrode with a dielectric layer placed therebetween, and thereby an output micro-wave transmission line is formed. A gate electrode Schottky connected to the channel area extends toward the input side, the source electrode extends above the drain electrode with the dielectric layer placed therebetween, and thereby an input micro-wave transmission line formed.

REFERENCES:
patent: 4479100 (1984-10-01), Moghe et al.
patent: 4996582 (1991-02-01), Nagahama
patent: 5256996 (1993-10-01), Marsland et al.

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