High-frequency semiconductor device

Details High-frequency semiconductor device High-frequency semiconductor device

1991-01-24

1992-08-11

Prenty, Mark V.

357 36, 357 68, 357 51, H01L 2972, H01L 2348, H01L 2702

Patent

active

051384175

ABSTRACT:
In a light-frequency transistor a base electrode extends from at lease two portions of a transistor region toward the outside, and the extension portions are connected to each other. Thus, a margin of a current density of a base electrode is not decreased. Moreover, the base electrode extends from at least two portions of the transistor region, and at least one of the two extension portions extends on a resistor layer connected to an emitter electrode and is connected to the other extension portion. For this reason, a collector electrode, the emitter electrode, and the base electrode can be formed at the same time, and a pattern for the base electrode can be easily obtained.

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