High frequency semiconductor component

Details High frequency semiconductor component High frequency semiconductor component

1997-06-20

1998-06-30

Saadat, Mahshid D.

Active solid-state devices (e.g., transistors, solid-state diode

Housing or package

For high frequency device

257275, 257276, 257664, 257774, 333246, 333247, H01L 2334, H01L 2980, H01L 31112

Patent

active

057738874

ABSTRACT:
A high frequency semiconductor component (10) includes a first substrate (12) having a first surface (13) opposite a second surface (14), a first electrically conductive layer (16) supported by the first surface (13) of the first substrate (12), a second electrically conductive layer (17) supported by the second surface (14) of the first substrate (12) wherein the second electrically conductive layer (17) is electrically coupled to the first electrically conductive layer (16), a second substrate (19) having a first surface (20) and a second surface (21), a third electrically conductive layer (22) supported by the first surface (20) of the second substrate (19), and an electrically insulating layer (23) between the second and third electrically conductive layers (17, 22) wherein the second and third electrically conductive layers (17, 22) are electrically coupled together through the electrically insulating layer (23).

REFERENCES:
patent: 4766481 (1988-08-01), Gobrecht et al.
patent: 5075648 (1991-12-01), Roberts et al.
patent: 5138436 (1992-08-01), Koepf
patent: 5206712 (1993-04-01), Kornrumpf et al.
patent: 5304805 (1994-04-01), Brown et al.
patent: 5426319 (1995-06-01), Notani
patent: 5451818 (1995-09-01), Chan et al.
patent: 5455384 (1995-10-01), Ichihara
patent: 5528074 (1996-06-01), Goto et al.
patent: 5534727 (1996-07-01), Inoue

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