High frequency semiconductor apparatus, transmitting...

Details High frequency semiconductor apparatus, transmitting... High frequency semiconductor apparatus, transmitting...

2008-05-13

2008-05-13

Estrada, Michelle (Department: 2823)

Active solid-state devices (e.g., transistors, solid-state diode

Housing or package

For high frequency device

C257SE21001, C029S025010

Reexamination Certificate

active

07372149

ABSTRACT:
A high frequency semiconductor apparatus is provided which prevents characteristics of a high frequency semiconductor element from being deteriorated so that the high frequency semiconductor element can be made to operate stably. The high frequency semiconductor apparatus is so configured that heat generated by a high frequency semiconductor element is sequentially conducted through a grounding via hole to a first ground layer, a first via hole, a first ground sublayer, a bonding material layer, a second ground layer, a second via hole, and a third ground layer.

REFERENCES:
patent: 6400576 (2002-06-01), Davidson
patent: 6566601 (2003-05-01), Maetani
patent: 6712284 (2004-03-01), Aoki et al.
patent: 7057279 (2006-06-01), Ogawa
patent: 2003/0042603 (2003-03-01), Koh
patent: 2003/0071350 (2003-04-01), Takehara et al.
patent: 2003/0160322 (2003-08-01), Hsieh et al.
patent: 2004/0077124 (2004-04-01), Ogawa
patent: 8-250913 (1996-09-01), None

Affiliated with

Also associated with

Rating

High frequency semiconductor apparatus, transmitting... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with High frequency semiconductor apparatus, transmitting..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and High frequency semiconductor apparatus, transmitting... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2810716