High frequency RF diode with low parasitic capacitance

Details High frequency RF diode with low parasitic capacitance High frequency RF diode with low parasitic capacitance

1998-08-27

2000-05-09

Hardy, David

Active solid-state devices (e.g., transistors, solid-state diode

Schottky barrier

257485, H01L 2947

Patent

active

060607572

ABSTRACT:
An RF diode, and method for its manufacture, in which a well, doped n-conductive or p-conductive, is formed in a high-ohmic silicon substrate. A silicon epitaxial layer is provided over a first subregion of a surface of the well wherein the layer has the same conductivity type as the doped well. The silicon epitaxial layer is provided with a first Schottky contact layer onto which a first contact metallization is applied. A second subregion located next to the first subregion of the surface of the well is provided with a second Schottky contact layer onto which a second contact metallization is applied.

REFERENCES:
patent: 3780320 (1973-12-01), Dorler et al.
patent: 4888623 (1989-12-01), Enomoto et al.
patent: 5021840 (1991-06-01), Morris
patent: 5258640 (1993-11-01), Hsieh et al.
patent: 5438218 (1995-08-01), Nakamura et al.
Microwave Semiconductors -short Form Catalog 1988/1989.
Lehrbuch der Hochfrequenztechnik, 1987.

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