High frequency power transistor having reduced interconnection i

Details High frequency power transistor having reduced interconnection i High frequency power transistor having reduced interconnection i

1977-11-07

1979-07-17

Wojciechowicz, Edward J.

357 40, 357 52, 357 54, 357 55, 357 68, 357 71, H01L 2972

Patent

active

041617401

ABSTRACT:
A transistor having small, closely spaced emitter and base contact areas and an active area capable of generating heat to be removed, is provided with an electrode structure comprising a finger electrode for connecting emitter or base contact areas with one or more bonding pads beside the active area and, electrically insulated from the finger electrode, a bonding plate electrode overlaying at least a portion of the active area for electrically contacting the base or emitter contact areas, respectively. This contact structure has reduced interconnection inductance and resistance, reduced MOS capacitance, and reduced thermal resistance. In addition, it provides a structure which is suitable for both conventional and flip chip mounting.

REFERENCES:
patent: 4024568 (1977-05-01), Yoshimura

Affiliated with

Also associated with

Rating

High frequency power transistor having reduced interconnection i does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with High frequency power transistor having reduced interconnection i, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and High frequency power transistor having reduced interconnection i will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-319954