High frequency, power semiconductor device

Electricity: conductors and insulators – Boxes and housings – Hermetic sealed envelope type

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Details

357 70, 357 72, 361421, H01L 2328, H05K 502

Patent

active

050287419

ABSTRACT:
A high frequency, low cost power semiconductor device (60) is provided by combining a semiconductor die (46) with a leadframe (10,12) having a coplanar upper surface (36) with thin external leads (18,20) and a thicker central die bond region (24) whose upper face (16) and sides (42) are covered by an encapsulation (52) but whose lower face (54) is exposed. The leadframe (10,12) desirably has an "H" pattern with the arms (18,20) extending laterally from opposed sides of the encapsulation (52) and down-formed to have their lower surfaces (62) coplanar with the exposed lower face (54) of the central die bond region (16,24) which forms the cross-bar of the "H". The leadframe is monolithic and preferably formed by skiving. The device is especially suited for surface-mounting.

REFERENCES:
patent: 3689683 (1972-09-01), Paletto et al.
patent: 4507675 (1985-03-01), Fujii
patent: 4942454 (1990-07-01), Mori et al.
patent: 4961105 (1990-10-01), Yamamoto

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