Amplifiers – With semiconductor amplifying device – Including field effect transistor
Reexamination Certificate
2005-05-24
2005-05-24
Choe, Henry (Department: 2817)
Amplifiers
With semiconductor amplifying device
Including field effect transistor
C330S296000
Reexamination Certificate
active
06897728
ABSTRACT:
A high frequency power amplifier module of a multistage amplifier construction comprising: an input terminal; an output terminal; a control terminal; and a mode switching terminal. The first amplification stage includes a dual gate FET, and a bias voltage according to a signal is applied to the first gate and the second gate of the dual gate FET from the control terminal and the mode switching terminal, and a radio signal from the input terminal is applied to the second gate such as the source of the dual gate FET. In dependence upon the signal from the mode switching terminal, the mode of the high frequency power amplifier module is for the GSM (i.e., for a non-linear amplifying action) and for the EDGE (for a linear amplifying action).
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Nikkei Electronics, No. 681, Jan. 27, 1997, pp. 115-126.
Adachi Tetsuaki
Akamine Hitoshi
Morikawa Masatoshi
Numanami Masahito
Nunogawa Yasuhiro
Choe Henry
Hitachi Tohbu Semiconductor, Ltd.
Mattingly ,Stanger ,Malur & Brundidge, P.C.
Renesas Technology Corp.
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