High frequency power amplifier module and semiconductor...

Details High frequency power amplifier module and semiconductor... High frequency power amplifier module and semiconductor...

2007-02-20

2007-02-20

Choe, Henry (Department: 2817)

Amplifiers

With semiconductor amplifying device

Integrated circuits

C330S302000

Reexamination Certificate

active

10862325

ABSTRACT:
Cross-band isolation characteristics are to be significantly improved without using any filtering circuit. In the central part of a semiconductor chip provided in an RF power module is formed a ground wiring layer from the upper part downward. This ground wiring layer is formed on the boundary between GSM side transistors and DCS side transistors for amplifying different frequency bands. Over the ground wiring layer are formed chip electrodes at equal intervals, and any one of the chip electrodes is connected via a bonding wire to a bonding electrode. The bonding electrode is formed over a module wiring board over which the semiconductor chip is to be mounted, and the ground wiring layer is connected to it. Harmonic signals are trapped by the ground wiring layer and the bonding wire.

REFERENCES:
patent: 6621347 (2003-09-01), Morimoto et al.
patent: 6734728 (2004-05-01), Leighton et al.
patent: 6833761 (2004-12-01), Staudinger et al.
patent: 2002-141756 (2000-10-01), None

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