High-frequency power amplifier module

Details High-frequency power amplifier module High-frequency power amplifier module

2006-08-08

2006-08-08

Nguyen, Khanh Van (Department: 2817)

Amplifiers

With semiconductor amplifying device

Integrated circuits

C330S302000, C330S310000

Reexamination Certificate

active

07088186

ABSTRACT:
A ground layer is provided between a first and a second wiring layer. A first transistor provided at the first wiring layer amplifies a supplied high-frequency signal. A second transistor provided at the first wiring layer amplifies the output signal of the first transistor. A first power supply line, which supplies power to the first transistor, is provided at the first wiring layer. A second power supply line, which supplies power to the second transistor, is provided at the second wiring layer.

REFERENCES:
patent: 6172567 (2001-01-01), Ueno et al.
patent: 6249186 (2001-06-01), Ebihara et al.
patent: 1061577 (2000-12-01), None
patent: 03-278701 (1991-12-01), None
patent: 10-197662 (1998-07-01), None
patent: 2000-357771 (2000-12-01), None
patent: 2002-141756 (2002-05-01), None

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