High-frequency power amplifier having heterojunction bipolar tra

Details High-frequency power amplifier having heterojunction bipolar tra High-frequency power amplifier having heterojunction bipolar tra

1988-03-11

1989-06-13

Mottola, Steven

Amplifiers

With semiconductor amplifying device

Including frequency-responsive means in the signal...

330296, H03F 3191

Patent

active

048396125

ABSTRACT:
A class C power amplifier has a heterojunction bipolar transistor as an element for amplifying an input signal. A d.c. bias voltage source, such as a d.c. battery, is connected to the transistor, such that a d.c. bias voltage lower than the turn-on voltage of the transistor is applied between the base and emitter of the bipolar transistor. An inductance coil is connected in series between the emitter of the transistor and the d.c. bias voltage source. Since the d.c. bias voltage is applied to the heterojunction bipolar transistor, the external drive voltage for activating the transistor is reduced to increase the high-frequency power gain of the amplifier.

REFERENCES:
patent: 3001146 (1961-09-01), Knol et al.
patent: 3413533 (1988-11-01), Kroemer et al.
patent: 4739379 (1988-04-01), Akagi et al.
IEEE MTT-S Digest 1987; "AlGaAs/GaAs Heterojunction Bipolar Transistors with 4W/mm Power Density at X-Band"; B. Bayraktaroglu et al; pp. 969-972.

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