Amplifiers – With semiconductor amplifying device – Including distributed parameter-type coupling
Patent
1992-12-10
1994-06-28
Mottola, Steven
Amplifiers
With semiconductor amplifying device
Including distributed parameter-type coupling
257728, 330307, H03F 360, H01L 2312
Patent
active
053250729
ABSTRACT:
A high-frequency power amplifier device is provided in which the number of ground lines on the electronic parts mounting face of a strip line substrate having microstrip lines is reduced or eliminated. Specifically, a metallic cover extending in parallel with the mounting face of the strip line substrate is grounded, and the microstrip lines between this cover and the strip line substrate are electrically connected by connecting means such as capacitors and/or conductors.
REFERENCES:
patent: 3784883 (1974-01-01), Duncan et al.
National Technical Report vol. 36, No. 4, Aug. 1990: "GaAs Power Amplifier Module for Portable Telephones", Y. Yamashita et al., pp. 34-38.
Gain, Sep., 1988, issued by Technical Center of Semiconductor Division of Hitachi, Ltd., pp. 23-25 (No. 70).
Kohjiro Iwamichi
Numanami Masahito
Hitachi , Ltd.
Mottola Steven
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