High-frequency power amplifier device and high-frequency module

Amplifiers – With semiconductor amplifying device – Including distributed parameter-type coupling

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257728, 330307, H03F 360, H01L 2312

Patent

active

053250729

ABSTRACT:
A high-frequency power amplifier device is provided in which the number of ground lines on the electronic parts mounting face of a strip line substrate having microstrip lines is reduced or eliminated. Specifically, a metallic cover extending in parallel with the mounting face of the strip line substrate is grounded, and the microstrip lines between this cover and the strip line substrate are electrically connected by connecting means such as capacitors and/or conductors.

REFERENCES:
patent: 3784883 (1974-01-01), Duncan et al.
National Technical Report vol. 36, No. 4, Aug. 1990: "GaAs Power Amplifier Module for Portable Telephones", Y. Yamashita et al., pp. 34-38.
Gain, Sep., 1988, issued by Technical Center of Semiconductor Division of Hitachi, Ltd., pp. 23-25 (No. 70).

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