Amplifiers – With semiconductor amplifying device – Including particular biasing arrangement
Reexamination Certificate
2007-07-17
2007-07-17
Pascal, Robert (Department: 2817)
Amplifiers
With semiconductor amplifying device
Including particular biasing arrangement
C330S288000
Reexamination Certificate
active
10858373
ABSTRACT:
A high frequency power amplifier electronic component (RF power module) is so constituted as to apply bias to an amplifier FET in current mirror configuration. In this RF power module, deviation of a bias point due to the short channel effect of the FET is corrected, and variation in high frequency power amplifier characteristics reduced. The high frequency power amplifier circuit (RF power module) is so constituted that the bias voltage for the amplifier transistor in a high frequency power amplifier circuit is supplied from a bias transistor connected with the amplifier transistor in current mirror configuration. In addition to a pad (external terminal) connected with the control terminal of the amplifier transistor, a second pad is provided which is connected with the control terminal of the bias transistor connected with the amplifier transistor in current mirror configuration.
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Ishikawa Makoto
Kikuchi Masahiro
Nagai Hiroyuki
Tsurumaki Hirokazu
Mattingly, Stanger Malur & Brundidge PC
Pascal Robert
Renesas Technology Corp.
Wong Alan
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