Amplifiers – With semiconductor amplifying device – Including gain control means
Reexamination Certificate
2008-09-22
2009-12-08
Nguyen, Patricia (Department: 2817)
Amplifiers
With semiconductor amplifying device
Including gain control means
C330S310000, C330S134000, C330S311000
Reexamination Certificate
active
07629851
ABSTRACT:
In a high frequency power amplifier circuit that supplies a bias to an amplifying FET by a current mirror method, scattering of a threshold voltage Vth due to the scattering of the channel impurity concentration of the FET, and a shift of a bias point caused by the scattering of the threshold voltage Vth and a channel length modulation coefficient λ due to a short channel effect are corrected automatically. The scattering of a high frequency power amplifying characteristic can be reduced as a result.
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Furuya Tomio
Ishikawa Makoto
Nagai Hiroyuki
Tsurumaki Hirokazu
Mattingly & Malur, P.C.
Nguyen Patricia
Renesas Technology Corp.
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