Telecommunications – Transmitter – Power control – power supply – or bias voltage supply
Patent
1997-10-03
2000-10-17
Bost, Dwayne D.
Telecommunications
Transmitter
Power control, power supply, or bias voltage supply
455 383, 257280, 330290, H01Q 1112, H01L 31112, H03F 130
Patent
active
061344249
ABSTRACT:
A MESFET of a GaAs semiconductor device having a p-pocket LDD structure is used for a high-frequency power amplifier of a mobile communication device, in order to decrease current consumption and to increase the continuous operating time of a battery. The high-frequency power amplifier is provided with a gate-bias adjusting feedback element between the drain and gate of the MESFET. Thus, even if there is a great difference between the filled and terminated potentials of the discharge voltage of the battery for supplying electric power to the amplifier, electric power can be supplied near the terminated potential for a long time, so that the mobile communication device can be continuously used for a long time.
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Kameyama Atsushi
Kitaura Yoshiaki
Morizuka Mayumi
Nagaoka Masami
Nishihori Kazuya
Bost Dwayne D.
Kabushiki Kaisha Toshiba
Redmon Joy K.
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