High-frequency power amplifier and communication device

Details High-frequency power amplifier and communication device High-frequency power amplifier and communication device

2011-01-18

2011-01-18

Choe, Henry K (Department: 2817)

Amplifiers

With semiconductor amplifying device

Including temperature compensation means

C330S296000

Reexamination Certificate

active

07872532

ABSTRACT:
It is an object of the present invention to provide a high-frequency power amplifier capable of improving the linearity at the time of high output by preventing decrease in power of bias supply transistor. The high-frequency power amplifier is a high-frequency power amplifier including high-frequency power amplifier transistors and connected in multiple stages and bias supply transistors and each of which supplies bias current to a base of a corresponding one of said high-frequency power amplifier transistors, and each of which is connected to a common power supply terminal which is further connected to a collector of the high-frequency power amplifier transistor at a first stage among said high-frequency power amplifier transistors, and a passive element connected between the common supply terminal and a collector of the corresponding one of said bias supply transistors connected to the high-frequency power amplifier transistor at the first stage.

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patent: 2002-009558 (2002-01-01), None
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patent: 2006-304178 (2006-11-01), None
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English language Abstract of JP 2004-040500, Feb. 5, 2004.
English language Abstract of JP 2002-009558, Jan. 11, 2002.
English language translation of Paragraph Nos. [0029]—[0031] and Fig. 2 of JP 2006-339837.
English language translation of pp. 1, right column, line 20 to p. 2, left column, line 6 and Fig. 2of JP 4-048808.

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