Amplifiers – With semiconductor amplifying device – Including temperature compensation means
Reexamination Certificate
2007-08-14
2007-08-14
Pascal, Robert (Department: 2817)
Amplifiers
With semiconductor amplifying device
Including temperature compensation means
Reexamination Certificate
active
11076525
ABSTRACT:
A temperature compensation circuit145included in a collector voltage generation section130aapplies an offset voltage Vofs(T) to a power control signal Vctrl according to a device temperature. The resulting temperature compensation circuit output voltage Vctrl′ (T) is applied to a collector terminal of a bipolar transistor110through a voltage regulator140and a choke inductor170.
REFERENCES:
patent: 6566944 (2003-05-01), Pehlke et al.
patent: 6665525 (2003-12-01), Dent et al.
patent: 6701138 (2004-03-01), Epperson et al.
patent: 6753735 (2004-06-01), Arai et al.
patent: 6897730 (2005-05-01), Dupuis et al.
patent: 6917243 (2005-07-01), Doherty et al.
patent: 08-028617 (1991-01-01), None
patent: 2001-176982 (2001-06-01), None
patent: 2002-009558 (2002-01-01), None
patent: WO 02/101944 (2002-12-01), None
Maya Oki
Tateoka Kazuki
Nguyen Hieu
Pascal Robert
LandOfFree
High-frequency power amplifier and communication apparatus does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with High-frequency power amplifier and communication apparatus, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and High-frequency power amplifier and communication apparatus will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3866975