Amplifiers – With semiconductor amplifying device – Including push-pull amplifier
Patent
1992-07-17
1993-12-28
Mullins, James B.
Amplifiers
With semiconductor amplifying device
Including push-pull amplifier
330277, 330295, 330306, H03F 326
Patent
active
052743411
ABSTRACT:
A high-frequency power amplifier comprises a pair of FETs, a divider which supplies opposite-phase versions of a signal to be amplified to the FETs, distributed-parameter transmission lines connected respectively at one ends thereof to output electrodes of the FETs, and a combiner which combines signals appearing at another ends of the transmission lines into a signal of a common phase. Stubs which short-circuit for even harmonics included in output signals of the FETs are connected respectively to the transmission lines at positions distant from the output electrodes of the FETs by a multiple of a quarter wavelength of the fundamental wave included in the output signals of the FETs. A first capacitor is connected between the transmission lines at positions distant from the output electrodes of the FETs by the 1/12 wavelength of the fundamental wave included in the output signals of the FETs so that the output electrodes of the FETs are open for the third harmonic, and a second capacitor is connected between the transmission lines at positions between the connecting positions of the first capacitor and the connecting positions of the stubs so as to perform impedance matching for the fundamental wave included in the output signals of the FETs.
REFERENCES:
patent: 4772856 (1988-09-01), Nojima et al.
patent: 5105167 (1992-04-01), Peczalski
Nojima et al, "High Efficiency GaAs FET Harmonic-Reaction-Amplifiers (HRA)", Proceedings of the 1989 Information and Communication Engineers of Japan, Paper No. SC-9-5, pp. 2-708, 2-709.
Funaki Haruhiko
Iso Akio
Masuda Nobuo
Ohnishi Masami
Sekine Kenji
Hitachi , Ltd.
Mullins James B.
Space Communications Research Corporation
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