High frequency power amplifier

Amplifiers – With semiconductor amplifying device – Including gain control means

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Details

330136, 330285, 330296, 455127, H03G 330

Patent

active

055326463

ABSTRACT:
In a high frequency power amplifier reduction of current consumption at the time of power down and an improvement in distortion of linearly modulated wave at the time of generation of its maximum output are automatically effected at the same time. Part of the high frequency output of a pre-stage amplifier is derived by a directional coupler inserted in the input part of a post-stage amplifier to be superposed through a DC voltage generator circuit on a gate bias voltage applied to the gate terminal of an FET in the post-stage amplifier, so that the gate bias voltage can be automatically controlled to its optimum value according to the output level required for the power amplifier.

REFERENCES:
patent: 4268797 (1981-05-01), Buck et al.
patent: 4317083 (1982-02-01), Boyd
patent: 4462004 (1984-07-01), Cox et al.
patent: 5087893 (1992-02-01), Petersen et al.
patent: 5363058 (1994-01-01), Sasaki

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