Amplifiers – With control of power supply or bias voltage – With control of input electrode or gain control electrode bias
Reexamination Certificate
2008-05-06
2008-05-06
Nguyen, Khanh Van (Department: 2817)
Amplifiers
With control of power supply or bias voltage
With control of input electrode or gain control electrode bias
C330S285000
Reexamination Certificate
active
11489609
ABSTRACT:
In a base-bias-control-type high-frequency power amplifier with a plural stage configuration, a rising voltage of a base bias current supplied to an initial stage transistor is made lower than a rising voltage of a base bias current supplied to a second stage transistor by a bias circuit, and a difference between the both voltages is set to be smaller than a base-emitter voltage of an amplifying stage transistor. Also, a rising voltage of a base bias current supplied to a third stage transistor is made equal to the rising voltage of the base bias current supplied to an initial stage transistor. Accordingly, a technology capable of improving the power control linearity can be provided in a high-frequency power amplifier used in a polar-loop transmitter or the like.
REFERENCES:
patent: 6236266 (2001-05-01), Choumei et al.
patent: 6701138 (2004-03-01), Epperson et al.
patent: 7038546 (2006-05-01), Kuriyama
patent: 7049892 (2006-05-01), Matsunaga et al.
patent: 2000-332542 (2000-11-01), None
patent: 2004-40418 (2004-02-01), None
Matsumoto Hidetoshi
Ohbu Isao
Tanoue Tomonori
Miles & Stockbridge P.C.
Nguyen Khanh Van
Renesas Technology Corp.
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