Amplifiers – With semiconductor amplifying device – Including plural amplifier channels
Reexamination Certificate
2007-12-18
2007-12-18
Nguyen, Patricia (Department: 2817)
Amplifiers
With semiconductor amplifying device
Including plural amplifier channels
C330S302000, C330S286000
Reexamination Certificate
active
11398627
ABSTRACT:
A high frequency power amplifier includes: a multi-finger transistor including transistor cells electrically connected in parallel; an input side matching circuit connected to gate electrodes of the transistor cells; and resonant circuits, each resonant circuit being connected between a gate electrode of a respective one of the transistor cells and the input side matching circuit. The resonant circuits resonate at a second harmonic of the operational frequency of the transistor or at a frequency within a predetermined range centered at the second harmonic and act as a short circuit or exhibit low impedance as seen from the gate electrode.
REFERENCES:
patent: 5105167 (1992-04-01), Peczalski
patent: 5592122 (1997-01-01), Masahiro et al.
patent: 6060951 (2000-05-01), Inoue
patent: 6177841 (2001-01-01), Ohta et al.
patent: 6236274 (2001-05-01), Liu
patent: 6344775 (2002-02-01), Morizuka et al.
patent: 6838941 (2005-01-01), Yamamoto et al.
patent: 08-037433 (1996-02-01), None
Gotou Seiki
Inoue Akira
Ohta Akira
Leydig , Voit & Mayer, Ltd.
Mitsubishi Denki & Kabushiki Kaisha
Nguyen Patricia
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