Amplifiers – With semiconductor amplifying device – Including gain control means
Reexamination Certificate
2006-12-26
2006-12-26
Nguyen, Patricia (Department: 2817)
Amplifiers
With semiconductor amplifying device
Including gain control means
C330S289000, C330S302000
Reexamination Certificate
active
07154336
ABSTRACT:
The present invention provides a compact and low-cost high-frequency power amplifier including GaAs heterojunction bipolar transistors (HBTs) but having a low level of noise in the transmission band. In the high-frequency power amplifier of the present invention, a chip capacitor21is connected at one end to an upstream stage bias circuit107via a bonding wire B1, and grounded at the other end. Also, a chip inductor22is connected to a base electrode of a high-frequency signal amplification HBT101via a bonding wire B2. In the high-frequency power amplifier of the present invention, the chip capacitor21causes noise generated within the upstream stage bias circuit107to flow to the ground, thereby reducing noise in the reception band. Also, the chip inductor22reduces a power loss of a high-frequency signal which is caused because the high-frequency signal flows to the ground.
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Matsushita Electric - Industrial Co., Ltd.
McDermott Will & Emery LLP
Nguyen Patricia
LandOfFree
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